BS-80020CPPS Plasma Source for Low-temperature Process

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Features

BS-80020CPPS Plasma Source for Low-temperature Process

This plasma source is specialized for low-temperature process, for example for a plastic substrate/film. Film quality of vacuum deposited film can be improved by plasma assisted deposition with lowering temperature increase of a substrate. And can also be used for plasma treatment such as cleaning and surface modification.

Can form high density oxide films in a low-temperature process.
Reactive deposition by electron beam excited plasma, associated with ion-assistant effects.
Activated Reactive Evaporation (ARE) technique, promoting highly effective discharge above crucible, to enhance ionization of evaporation materials.
Selectable from CPPS mode, for low-temperature process, and normal plasma mode.
Retrofit to an existing vacuum chamber is possible.

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Specifications

Maximum plasma output	3.2kW (160V, 20A)
Maximum assisted output	2kW (200V, 10A)
Operating pressure	8×10^-3 to 8×10^-2Pa (Ar, O₂, N₂ atmosphere)
Discharge gas (Ar)	8 to 20mL/min
Cooling water	5 to 8 L/min
Applicable control power supply	BS-92040CPPC