JBX-3050MV Electron Beam Lithography System

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Features

JBX-3050MV Electron Beam Lithography System
JBX-3050MV is a variable-shaped electron beam lithography system for mask making of 45 nm to 32 nm nodes. Its cutting-edge technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat stage.

The JBX-3050MV is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 to 32 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end technology.

Specifications

Stitching accuracy ≦±3.8 nm
Overlay accuracy ≦±7 nm

Application

Gallery

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Information

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