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JBX-8100FS Series Electron Beam Lithography System
Spot type Electron Beam Lithography System JBX-8100FS achieved high throughput, small footprint and electric power saving.

Small footprint

The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.

Low power consumption

Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.

High throughput

The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.


The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.

New Functions

An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.

Laser positioning resolution

Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.

System control

Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

Windows is a registered trademark of Microsoft Corporation in the United States and other countries.
Linux® is the registered trademark of Linus Torvalds in the U.S. and other countries.

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Version G1 (Entry model) G2 (Full option model)
Writing method Spot beam, vector scan, step and repeat.
Acceleration voltage 100 kV 100 kV / 50 kV
Beam current 5 × 10-12 ~ 2 × 10-7 A
Field size Maximum 1,000 μm × 1,000 μm Maximum 2,000 μm × 2,000 μm 
Scanning speed Maximum 125 MHz
Stage movable area 190 mm × 170 mm
Overlay accuracy ≦±9nm
Stitching accuracy ≦±9nm
Electric requirements (Normal) 3kVA
Substrate size Maximum 200mmΦ wafer
6 inch mask blanks
Small sample of any size
Substrate transfer  Single auto loader 12 cassettes auto loader
Major installable Options Optical microscope
25 kV high voltage program
Data preparation program additional license
High resolution laser beam control system



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