Semiconductor and Electronic Parts
In the semiconductors field, JEOL Electron Beam Lithography Systems, SEMs, FIB (SEM)s, and TEMs are utilized in the processes of pattern generation, monitoring, defect analysis and packaging. Also for various electronic parts, our SEMs, FIB (SEM)s and TEMs are used.
PRODUCT LINEUP
APPLICATIONS NOTES
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The most-viewed application note in 2020FY
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Strong interaction between light and electrons (6) "Coupling constant and line width"
ER200011E
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Strong interaction between light and electrons (5) "Frequency dependence of line width in ESR and FMR"
ER200010E
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Strong interaction between light and electrons (4) "Transmission ESR/FMR measurement method"
ER200009E
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Strong interaction between light and electrons (3) "Strong coupling state of ferromagnetic thin film"
ER200008E
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Strong interaction between light and electrons (2) "Four states of interaction between photon and spins"
ER200007E
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Strong interaction between light and electrons (1) "Effect of excessive spins"
ER200006E
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Handbook of Soft X-ray Emission Spectra Version 6.0 (Sep. 2020)
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Electrolytic ESR - Quantity dependence of supporting electrolyte -
ER180013E
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Electrolytic ESR - Time and Voltage dependence for Anthraquinone anion-
ER180012E
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Electrolytic ESR - Generation of p-Benzoquinone anion radical -
ER190008E
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Electrolytic ESR - Time and Voltage dependence for p-Benzoquinone anion -
ER190009E
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AccuTOF™ GC series Materials and Chemistry Applications Notebook
Edition May 2020
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The most-viewed application note in 2019FY
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Ferromagnetic thin film and spin current (3) - Sample preparation -
ER190004E
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Ferromagnetic thin film and spin current (2) - Inverse spin-Hall effect
ER190003E
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Ferromagnetic thin film and spin current (1) - FMR and spin current -
ER190002E
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Ferromagnetic thin film and spin current (6) -Angular dependence (2) -
ER190007E
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Ferromagnetic thin film and spin current (5) -Angular dependence (1) -
ER190006E
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Ferromagnetic thin film and spin current (4) - Power dependence -
ER190005E
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JEOL NEWS Vol.53
JEOL NEWS Vol.53/ July 2018
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ESR of Materials -Electrically Detected Magnetic Resonance 1-
ER170007
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ESR of Materials - Semiconductor 1-
ER170006
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Development of the JBX-8100FS Electron Beam Lithography System
JEOL NEWS Vol.53 No.10
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Structural Analysis of Semiconductor Devices by Using STEM/EDS Tomography
JEOL NEWS Vol.53 No.7