Electron Beam Lithography System List

JBX-6300FS Electron Beam Lithography System

JBX-6300FS can easily write patterns down to 8nm or less (actual result: 5nm) by the employment of an electron optical system that automatically adjusts a 2.1nm-diameter electron beam at 100kV accelerating voltage. Furthermore, this EB system achieves high field-stitching and overlay accuracy of 9nm or less, providing high cost performance. Furthermore, a unique automatic correction function developed by JEOL enables high-precision pattern writing. JBX-6300FS responds to a wide range of requirements, such as R&D of cutting-edge devices, nanotechnology-related R&D and communication-device production.

JBX-9500FS Electron Beam Lithography System

JBX-9500FS is a 100kV EB system that provides world-top-level throughput and positional accuracy among Spot beam lithography systems. This EB system can accommodate up to 300mmΦ wafer and up to 6-inch mask, thus responding to R&D and production in various fields, such as nanoimprint, photonic device and communication device.

JBX-3200MV Electron Beam Lithography System

JBX-3200MV is a variable-shaped electron beam lithography system for mask making of 28 nm to 22/20 nm nodes. Its cutting-edge technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat specimen stage.

JBX-3050MV Electron Beam Lithography System

JBX-3050MV is a variable-shaped electron beam lithography system for mask making of 45 nm to 32 nm nodes. Its cutting-edge technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat stage.

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