JEOL Introduces a Power-Efficient High-Throughput Spot Beam Lithography System, JBX-8100FS series

2017/03/28

JEOL Ltd. (President Gon-emon Kurihara) announced a new spot beam lithography system, JBX-8100FS series, to be distributed in March 2017.

Product development background

Spot beam lithography system is a versatile technique for ultra fine pattern writing. Capable of accomplishing a minimum line width of a few nm to several tens nm, spot beam lithography is used in a wide range of applications from research to production. Problems with this technique, however, include low throughput as the feature sizes become smaller, and high running cost because it requires a large area for operation.
To address these problems, JEOL has developed the JBX-8100FS series, a compact, energy efficient electron beam lithography system designed to minimize the idle time in operation, especially during the exposure process, thus increasing throughput.

Main Features

  • Small footprint
    The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.
  • Low power consumption
    Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.
  • High throughput
    The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.
  • Version
    The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.
  • New Functions
    An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.
  • Laser positioning resolution
    Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.
  • System control
    Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

Notice:
Linux® is a registered trademark or trademark of Linus Torvalds in Japan and other countries.
Windows is a registered trademarks or trademark of Microsoft Corporation in the US and other countries.

Main Specifications

Writing method Spot beam, vector scan, step and repeat
Accelerating voltage 100 kV (50 kV, 25 kV optional)
Scanning speed Max 125 MHz
Field size 100 μm × 100 μm (high resolution mode)
1,000 μm × 1,000 μm (high throughput mode)
Stage movement 190 mm × 170 mm
Minimum step for stage movement 0.6 nm (0.15 nm optional)
Overlay accuracy ±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode)
Field stitching accuracy ±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode)
Sample size Wafers up to 200 mmφ, masks up to 6 inch, and micro sample pieces of any size
JBX-8100FS

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