Release of the New Ultrahigh Resolution Schottky Field Emission Scanning Electron Microscope JSM-7610FPlus -High-performance FE-SEM enabling observation and analysis of extremely fine structures-


JEOL Ltd. (President Gon-emon Kurihara) announces the release of the JSM-7610FPlus, which is an upgraded model of the ultrahigh resolution Schottky field emission scanning electron microscope JSM-7610F, to be released in September 2017.

Product development background

Scanning electron microscopes are used in a wide range of fields, such as nanotechnology, metallurgy, semiconductors, ceramics, medicine, and biology. As advanced materials feature an increasingly smaller, finer structure, scientists are in need of ultrahigh resolution imaging as well as analysis of the advanced materials. To meet these demands, the highly regarded JSM-7610F was upgraded to achieve higher resolution imaging through an improved electron optical system. As a result, the JSM-7610FPlus has been debuted.
The JSM-7610FPlus successfully combines ultrahigh resolution imaging and high spatial resolution analysis, with an efficient combination of the semi-in-lens objective lens and the in-lens Schottky field emission electron gun providing a large probe current with high stability.

Main Features

  • Semi-in-lens objective lens allowing high spatial resolution
    The JSM-7610FPlus incorporates the semi-in-lens objective lens capable of finely focusing an electron probe, thus enabling high resolution to be obtained at low accelerating voltages.
  • GENTLEBEAM™mode for the surface observation at low accelerating voltages
    GENTLEBEAM™mode (GB mode) is a function to decelerate the electron probe just above the specimen, by applying a bias voltage to the specimen. This mode is very suitable for observation and analysis at low accelerating voltages.
  • Energy filtering with the "r-filter"
    Electrons are generated from the specimen when irradiated with the electron probe. The r-filter is used to filter those electrons to selectively detect the secondary- or backscattered electrons.
  • Low-angle backscattered electron image acquired with LABE detector (option)
    The LABE (Low Angle BE (backscattered electron)) detector is capable of detecting low-energy backscattered electrons at low angles. The detailed topographic information on the specimen surface can be obtained at low accelerating voltages, whereas the composition of the specimen can be observed at high accelerating voltages.
  • High Power Optics
    The in-lens Schottky field emission electron gun that provides a large probe current with high stability, and the aperture angle control lens (ACL) that automatically optimizes the electron probe diameter over all the probe current range, are successfully combined. This superb capability achieves stable observation and analysis.
  • Various attachments to meet diversified needs
    The JSM-7610FPlus accommodates various attachments, including EDS (energy dispersive X-ray spectrometer), WDS (wavelength dispersive X-ray spectrometer), CL (cathodoluminescence detector) and other analytical detectors, thus responding to diversified analytical needs.

Main Specifications

Secondary electron image resolution 0.8nm (Accelerating voltage 15 kV)
1.0nm (Accelerating voltage 1 kV, GB mode)
During analysis 3.0 nm (Accelerating voltage 15 kV, WD 8 mm, Probe current 5 nA)
Magnification ×25 to ×19,000 (LM mode)
×130 to ×1,000,000 (SEM mode)
Accelerating voltage 0.1 kV to 30 kV
Probe current A few pA to 200 nA
Electron gun In-lens Schottky field emission electron gun
JEOL JSM-7610FPlus

Annual unit sales target

50 units/year