分子線エピタキシ

molecular beam epitaxy, MBE

[目次：試料等(試料および試料作製)]

超高真空中で、目的の結晶を構成する元素あるいは元素を含む材料を加熱蒸発して、加熱された結晶基板上に結晶膜を堆積成長させる結晶膜成長法のこと。真空蒸着に近い手法であるが、蒸発する分子線の強度を精度よく制御し、原子レベルに制御した試料を作る方法。透過電子顕微鏡用の試料作製にも用いられる。

"Molecular beam epitaxy (MBE)" is a technique to deposit and grow a crystalline film in an ultra-high vacuum. In MBE, target elements or target materials that will constitute a target crystal are heated and evaporated and then, the target crystalline film is deposited and grown on a heated crystalline substrate. MBE is similar to vacuum evaporation (deposition), but the technique accurately controls the molecular beam to prepare a crystalline specimen controlled at the atomic scale. MBE is used also for specimen preparation for a TEM.

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