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エネルギー損失吸収端微細構造

エネルギー損失吸収端微細構造

energy-loss near-edge structure, ELNES

[目次:分光分析(EELS/EDS/電子構造)]

EELSの内殻電子励起スペクトルにおいて、吸収端から高エネルギー側に約30eVにわたって現れる微細構造。ELNESは内殻準位から伝導帯への遷移に伴って生じるもので、物質の伝導帯の状態密度分布がわかる。

A fine structure appearing in an energy region of about 30 eV above the absorption-edge energy in the EELS core-loss spectrum. This structure is called "energy-loss near-edge structure (ELNES)." The ELNES is produced by the transitions of electrons from the inner-shell state to the conduction band (unoccupied state), enabling us to obtain the density of states of the conduction band of a substance.

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